Nanoparticle characterization by means of scanning free grazing emission X-ray fluorescence
نویسندگان
چکیده
منابع مشابه
Depth profiling of low energy ion implantations in Si and Ge by means of micro-focused grazing emission X-ray fluorescence and grazing incidence X-ray fluorescence
Depth-profiling measurements by means of synchrotron radiation based grazing XRF techniques, i.e., grazing emission X-ray fluorescence (GEXRF) and grazing incidence X-ray fluorescence (GIXRF), present a promising approach for the non-destructive, sub-nanometer scale precision characterization of ultra shallow ion-implantations. The nanometer resolution is of importance with respect to actual se...
متن کاملNano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy
ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...
متن کاملNano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy
ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...
متن کاملnano-structural characterization of post-annealed zno thin films by x-ray diffraction and field emission scanning electron microscopy
zno thin films were deposited on si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°c). dependence of the crystallographic structure, nano-strain, chemical composition and surface physical morphology of these layers on annealing temperature were studied. the crystallographic structure of films was studied using x-ray diffracti...
متن کاملDepth profiles of Al impurities implanted in Si wafers determined by means of the high resolution grazing emission x-ray fluorescence technique
The synchrotron based high resolution grazing emission x-ray fluorescence (GEXRF) technique is used to extract the distribution of Al ions which were implanted with a dose of 10 atoms/cm in Si wafers with different energies ranging between 1 and 100 keV. In this purpose an angular scan around the critical angle was made. In addition special efforts were made to improve the experimental conditio...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanoscale
سال: 2015
ISSN: 2040-3364,2040-3372
DOI: 10.1039/c5nr00791g